IXFH26N50Q

IXYS SEMICONDUCTOR  IXFH26N50Q  晶体管, MOSFET, HiPerFET, N沟道, 26 A, 500 V, 200 mohm, 10 V, 4.5 V

通孔 N 通道 26A（Tc） 300W（Tc） TO-247AD（IXFH）

得捷:
MOSFET N-CH 500V 26A TO247AD

贸泽:
MOSFET 500V 26A

e络盟:
功率场效应管, MOSFET, HiPerFET, N沟道, 500 V, 26 A, 0.2 ohm, TO-247, 通孔

艾睿:
Create an effective common drain amplifier using this IXFH26N50Q power MOSFET from Ixys Corporation. Its maximum power dissipation is 300000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes hiperfet technology.

Chip1Stop:
Trans MOSFET N-CH 500V 26A 3-Pin3+Tab TO-247AD

Verical:
Trans MOSFET N-CH 500V 26A 3-Pin3+Tab TO-247AD

Newark:
# IXYS SEMICONDUCTOR  IXFH26N50Q  MOSFET Transistor, HiPerFET, N Channel, 26 A, 500 V, 200 mohm, 10 V, 4 V

Win Source:
MOSFET N-CH 500V 26A TO-247AD