BUK9510-100B和PSMN009-100P,127

对比图

型号 BUK9510-100B PSMN009-100P,127 BUK7510-100B

描述 的TrenchMOS ™逻辑电平FET TrenchMOS⑩ logic level FETTO-220AB N-CH 100V 75AMOS(场效应管)/BUK7510-100B 管装

数据手册 ---

制造商 NXP (恩智浦) NXP (恩智浦) NXP (恩智浦)

分类 MOS管MOS管MOS管

安装方式 Through Hole Through Hole Through Hole

封装 TO-220-3 TO-220-3 TO-220-3

引脚数 - 3 -

额定电压(DC) 100 V - 100 V

额定电流 75.0 A - 110 A

漏源极电压(Vds) 100 V 100 V 100 V

输入电容(Ciss) 11045pF @25V(Vds) 8250pF @25V(Vds) 6773pF @25V(Vds)

额定功率(Max) 300 W 230 W 300 W

耗散功率(Max) - 230W (Tc) 300W (Tc)

极性 N-CH N-Channel -

连续漏极电流(Ids) 75A 75A -

漏源极电阻 - 7.5 Ω -

耗散功率 - 230 W -

阈值电压 - 3 V -

工作温度(Max) - 175 ℃ -

工作温度(Min) - -55 ℃ -

封装 TO-220-3 TO-220-3 TO-220-3

工作温度 -55℃ ~ 175℃ (TJ) -55℃ ~ 175℃ (TJ) -55℃ ~ 175℃ (TJ)

产品生命周期 Unknown Active Unknown

包装方式 Tube Tube Tube

RoHS标准 RoHS Compliant RoHS Compliant RoHS Compliant

含铅标准 Lead Free Lead Free Lead Free

REACH SVHC版本 - 2015/12/17 -