对比图
型号 EMD9T2R UMD9NTR NSBC114YPDXV6T1G
描述 ROHM EMD9T2R 双极晶体管阵列, 双路, NPN, PNP, 50 V, 150 mW, 100 mA, 68 hFE, EMTNPN+PNP 晶体管，ROHM### Digital Transistors, ROHMResistor-equipped bipolar transistors, also known as Digital Transistors or Bias Resistor Transistors, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.ON SEMICONDUCTOR NSBC114YPDXV6T1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7 电阻比率, SOT-563
数据手册 ---
制造商 ROHM Semiconductor (罗姆半导体) ROHM Semiconductor (罗姆半导体) ON Semiconductor (安森美)
分类 双极性晶体管双极性晶体管双极性晶体管
安装方式 Surface Mount Surface Mount Surface Mount
引脚数 6 6 6
封装 EMT-6 SC-70-6 SOT-563-6
额定电压(DC) 50.0 V - 50.0 V
额定电流 70.0 mA 70.0 mA 100 mA
极性 NPN, PNP NPN, PNP NPN, PNP
耗散功率 150 mW 0.15 W 0.5 W
击穿电压(集电极-发射极) 50 V 50 V 50 V
集电极最大允许电流 100mA 100mA 100mA
最小电流放大倍数(hFE) 68 @5mA, 5V 68 @5mA, 5V 80 @5mA, 10V
额定功率(Max) 150 mW 150 mW 500 mW
工作温度(Max) 150 ℃ 150 ℃ 150 ℃
工作温度(Min) -55 ℃ -55 ℃ -55 ℃
耗散功率(Max) 150 mW 300 mW 500 mW
额定功率 0.15 W 0.15 W -
通道数 2 2 -
增益带宽 250 MHz 250 MHz -
直流电流增益(hFE) 68 - -
封装 EMT-6 SC-70-6 SOT-563-6
长度 1.6 mm 2.1 mm -
宽度 1.2 mm 1.35 mm -
高度 0.5 mm 0.9 mm -
工作温度 -55℃ ~ 150℃ -55℃ ~ 150℃ -55℃ ~ 150℃
产品生命周期 Active Active Active
包装方式 Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
RoHS标准 RoHS Compliant RoHS Compliant RoHS Compliant
含铅标准 Lead Free Lead Free Lead Free
REACH SVHC标准 No SVHC No SVHC No SVHC
REACH SVHC版本 2015/06/15 - 2015/12/17
ECCN代码 EAR99 EAR99 EAR99
香港进出口证 NLR - -