IGBT(Insulated Gate Bipolar Transistor),绝缘栅双极型晶体管,是由BJT(双极型三极管)和MOS(绝缘栅型场效应管)组成的复合全控型电压驱动式功率半导体器件, 兼有MOSFET的高输入阻抗和GTR的低导通压降两方面的优点。GTR饱和压降低,载流密度大,但驱动电流较大;MOSFET驱动功率很小,开关速度快,但导通压降大,载流密度小
SIGC18T60SNCX1SA2
IGBT 3 CHIP 600V WAFER
品牌:INFINEON
库存:0
货期: 1~2工作日 7~10工作日
SIGC12T60NCX1SA4
SIGC42T60SNCX1SA2
SIGC42T60NCX1SA5
SIGC42T60UNX1SA1
SIGC81T60NCX1SA5
SIGC100T60R3EX1SA4
IGBT 3 CHIP 600V 200A WAFER
SIGC121T60NR2CX1SA3
SIGC14T60NCX1SA2
SIGC10T60EX7SA1
IGBT 3 CHIP 600V 20A WAFER
IGC11T60TEX7SA1
IGBT 600V 11A WAFER
SIGC08T60EX1SA2
IGBT 3 CHIP 600V 15A WAFER
SIGC25T60NCX1SA2
SIGC42T60UNX7SA2
SIGC15T60EX7SA2
IGBT 3 CHIP 600V 30A WAFER
SIGC18T60SNCX7SA2
SIGC05T60SNCX1SA1
SIGC18T60NCX1SA5
SIGC28T60EX7SA1
IGBT 3 CHIP 600V 50A WAFER
SIGC14T60NCX7SA2
SIGC61T60NCX7SA1
SIGC76T60R3EX7SA1
SIGC25T60UNX7SA1
SIGC08T60EX7SA1
SIGC07T60NCX1SA4
SIGC07T60SNCX7SA2
IGC03T60TEX7SA2
IGBT 600V 3A WAFER
SIGC12T60NCX1SA5
SIGC18T60NCX1SA4
SIGC06T60EX7SA1
IGBT 3 CHIP 600V 10A WAFER
SIGC10T60EX1SA3
SIGC05T60SNCX7SA2
SIGC07T60SNCX7SA1
SIGC81T60NCX7SA2
SIGC100T60R3EX7SA1
SIGC81T60NCX1SA3
SIGC25T60UNX1SA1
SIGC18T60NCX1SA6
SIGC14T60NCX1SA7
SIGC07T60SNCX1SA4
SIGC25T60UNX1SA3
SIGC14T60NCX1SA1
SIGC42T60SNCX7SA1
SIGC12T60NCX7SA2
SIGC25T60NCX1SA4
SIGC18T60NCX7SA1
SIGC61T60NCX1SA3
SIGC156T60NR2CX1SA2
SIGC07T60SNCX1SA2
SIGC12T60SNCX7SA2
型号:
品牌:
供货:锐单
单价:
货期:1-2天
单价:¥0.00总价:¥0.00