FAIRCHILD SEMICONDUCTOR FDD6N20TM 晶体管, MOSFET, N沟道, 4.5 A, 200 V, 0.6 ohm, 10 V, 5 V
The is an UniFET™ N-channel High Voltage MOSFET produced based on Semiconductor"s planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power, ATX and electronic lamp ballasts.
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- 100% Avalanche tested
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- 4.7nC Typical low gate charge
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- 6.3pF Typical low Crss
针脚数 3
漏源极电阻 0.6 Ω
极性 N-Channel
耗散功率 40 W
阈值电压 5 V
漏源极电压Vds 200 V
连续漏极电流Ids 4.5A
上升时间 5.6 ns
输入电容Ciss 230pF @25VVds
额定功率Max 40 W
下降时间 12.8 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 40W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDD6N20TM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQD7N20TM 飞兆/仙童 | 类似代替 | FDD6N20TM和FQD7N20TM的区别 |
FDD6N20TF 飞兆/仙童 | 类似代替 | FDD6N20TM和FDD6N20TF的区别 |
BSP297L6327 英飞凌 | 功能相似 | FDD6N20TM和BSP297L6327的区别 |