LM5109BQNGTTQ1

TEXAS INSTRUMENTS  LM5109BQNGTTQ1  芯片, 场效应管, MOSFET驱动器, 半桥接器, AECQ100, WSON8 新

The LM5109B-Q1 is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with TTL/CMOS compatible logic input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the thermally enhanced WSON8 packages.