RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
Amplifying and switching electronic signals fast and reliably can be done with this RF amplifier from STMicroelectronics specified for radio frequency environments. Its maximum power dissipation is 95000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C.
频率 870 MHz
耗散功率 95 W
漏源击穿电压 40 V
输出功率 15 W
增益 17 dB
测试电流 350 mA
输入电容Ciss 76pF @12.5VVds
工作温度Max 165 ℃
工作温度Min -65 ℃
耗散功率Max 95000 mW
额定电压 40 V
安装方式 Surface Mount
引脚数 3
封装 PowerSO-10RF
长度 7.5 mm
宽度 9.4 mm
高度 3.5 mm
封装 PowerSO-10RF
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PD85035STR-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD85035S-E 意法半导体 | 类似代替 | PD85035STR-E和PD85035S-E的区别 |