Trans MOSFET N-CH 250V 4A 3Pin2+Tab DPAK T/R
表面贴装型 N 通道 4A（Tc） 50W（Tc） DPAK
得捷:
MOSFET N-CH 250V 4A DPAK
贸泽:
MOSFET N-Ch 250 Volt 4 Amp
艾睿:
This STD4NS25T4 power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 50000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device utilizes mesh overlay technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -65 °C to 150 °C.
Chip1Stop:
Trans MOSFET N-CH 250V 4A 3-Pin2+Tab DPAK T/R
Win Source:
MOSFET N-CH 250V 4A DPAK
额定电压DC 250 V
额定电流 4.00 A
漏源极电阻 900 mΩ
极性 N-Channel
耗散功率 50 W
阈值电压 3 V
漏源极电压Vds 250 V
漏源击穿电压 250 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 4.00 A
上升时间 18 ns
输入电容Ciss 355pF @25VVds
下降时间 10.5 ns
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 50W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.2 mm
高度 2.4 mm
封装 TO-252-3
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Cut Tape CT
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STD4NS25T4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STD4NS25 意法半导体 | 功能相似 | STD4NS25T4和STD4NS25的区别 |