






Trans IGBT Chip N-CH 600V 34A 31000mW 3Pin3+Tab TO-220FP Tube
This IGBT transistor from STMicroelectronics will work perfectly in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 31000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STGF30H60DF ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STGF30M65DF2 意法半导体 | 类似代替 | STGF30H60DF和STGF30M65DF2的区别 |
STGB30H60DF 意法半导体 | 功能相似 | STGF30H60DF和STGB30H60DF的区别 |