N沟道30A - 600V - TO- 247超快速开关的PowerMESH IGBT N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT
Minimize the current at your gate with the IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 200000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
额定电压DC 600 V
额定电流 60.0 A
漏源极电阻 2.50 Ω
极性 N-Channel
耗散功率 200 W
漏源击穿电压 600 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 30.0 A
上升时间 12.0 ns
击穿电压集电极-发射极 600 V
额定功率Max 200 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 200000 mW
安装方式 Through Hole
引脚数 3
封装 TO-247-3
长度 15.75 mm
宽度 5.15 mm
高度 20.15 mm
封装 TO-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STGW30NC60W ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STGW30NC60WD 意法半导体 | 类似代替 | STGW30NC60W和STGW30NC60WD的区别 |
STGW39NC60VD 意法半导体 | 类似代替 | STGW30NC60W和STGW39NC60VD的区别 |
STGW30H65FB 意法半导体 | 类似代替 | STGW30NC60W和STGW30H65FB的区别 |