STGP20H60DF

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STGP20H60DF概述

600V,20A高速沟槽栅场终止IGBT

Use the IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 100000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

STGP20H60DF中文资料参数规格
技术参数

耗散功率 167 W

击穿电压集电极-发射极 600 V

反向恢复时间 90 ns

额定功率Max 167 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 100000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买STGP20H60DF
型号: STGP20H60DF
描述:600V,20A高速沟槽栅场终止IGBT

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