N沟道600V - 7A - TO- 220超高速的PowerMESH IGBT N-channel 600V - 7A - TO-220 Ultra fast PowerMESH IGBT
Don"t be afraid to step up the amps in your device when using this IGBT transistor from STMicroelectronics. Its maximum power dissipation is 32000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
极性 N-Channel
耗散功率 32000 mW
上升时间 7.00 ns
击穿电压集电极-发射极 600 V
反向恢复时间 31 ns
额定功率Max 32 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 32000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
高度 16.4 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC