-50V,-130mA,10Ω,单P沟道功率MOSFET
表面贴装型 P 通道 130mA(Ta) 225mW(Ta) SOT-23-3(TO-236)
得捷:
MOSFET P-CH 50V 130MA SOT23-3
立创商城:
P沟道 50V 130mA
艾睿:
As an alternative to traditional transistors, the SBSS84LT1G power MOSFET from ON Semiconductor can be used to both amplify and switch electronic signals. Its maximum power dissipation is 225 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
Verical:
Trans MOSFET P-CH 50V 0.13A Automotive 3-Pin SOT-23 T/R
力源芯城:
-50V,-130mA,10Ω,单P沟道功率MOSFET
通道数 1
针脚数 3
漏源极电阻 4.7 Ω
极性 P-CH
耗散功率 0.225 W
漏源极电压Vds 50 V
连续漏极电流Ids 0.13A
上升时间 9.7 ns
输入电容Ciss 36pF @5VVds
下降时间 1.7 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 225mW Ta
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
SBSS84LT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
BVSS84LT1G 安森美 | 完全替代 | SBSS84LT1G和BVSS84LT1G的区别 |
BSS84 安森美 | 类似代替 | SBSS84LT1G和BSS84的区别 |
LBSS84LT1G 乐山无线电 | 功能相似 | SBSS84LT1G和LBSS84LT1G的区别 |