SG2003J

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SG2003J概述

高压中等电流驱动器阵列 HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS

Key Features: • Seven npn Darlington pairs • -55°C to 125°C ambient operating temperature range • Collector currents to 600mA • Output voltages from 50V to 95V • Internal clamping diodes for inductive loads • DTL, TTL, PMOS, or CMOS compatible inputs • Hermetic ceramic package The SG2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in many military, aerospace, and industrial applications that require severe environments. All units feature open collector outputs with greater than 50V breakdown voltages combined with 500mA current carrying capabilities. Five different input configurations provide optimized designs for interfacing with DTL, TTL, PMOS, or CMOS drive signals. These devices are designed to operate from -55°C to 125°C ambient temperature in a 16 pin dual in line ceramic J package and 20 pin Leadless Chip Carrier LCC. The plastic dual in–line N is designed to operate over the commercial temperature range of 0C to 70°C.

SG2003J中文资料参数规格
技术参数

极性 NPN

击穿电压集电极-发射极 50 V

集电极最大允许电流 0.5A

最小电流放大倍数hFE 1000 @350mA, 2V

工作温度Max 125 ℃

工作温度Min -55 ℃

封装参数

安装方式 Through Hole

引脚数 16

封装 CDIP-16

外形尺寸

封装 CDIP-16

物理参数

工作温度 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 Non-Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

香港进出口证 NLR

数据手册

在线购买SG2003J
型号: SG2003J
制造商: Microsemi 美高森美
描述:高压中等电流驱动器阵列 HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS
替代型号SG2003J
型号/品牌 代替类型 替代型号对比

SG2003J

Microsemi 美高森美

当前型号

当前型号

SG2003N

美高森美

完全替代

SG2003J和SG2003N的区别

SG2003J/883B

美高森美

类似代替

SG2003J和SG2003J/883B的区别

SG2003L/883B

美高森美

功能相似

SG2003J和SG2003L/883B的区别

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