SI4866BDY-T1-GE3

VISHAY  SI4866BDY-T1-GE3  场效应管, MOSFET, N通道, 12V, 21.5A, SOIC, 整卷

**Features:

* **Halogen-Free Option Available

* Low-Side Switching

* Low On-Resistance: 5 Ω

* Low Threshold: 0.9 V Typ.

* Fast Switching Speed: 35 ns Typ.

* TrenchFET® Power MOSFETs: 1.5 V Rated

* ESD Protected: 2000 V

**Applications:

**

* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

* Battery Operated Systems

* Power Supply Converter Circuits

* Load/Power Switching Cell Phones, Pagers

e络盟:
VISHAY  SI4866BDY-T1-GE3  场效应管, MOSFET, N通道, 12V, 21.5A, SOIC, 整卷

艾睿:
Trans MOSFET N-CH 12V 16.1A 8-Pin SOIC N T/R

Allied Electronics:
SI4866BDY-T1-GE3 N-channel MOSFET Transistor, 21 A, 12 V, 8-Pin SOIC

安富利:
Trans MOSFET N-CH 12V 16.1A 8-Pin SOIC N T/R

富昌:
12V 21.5 A 5.3 Mohm 漏源导通电阻 当4.5 V时 52 nC Qg SO-8

Verical:
Trans MOSFET N-CH 12V 16.1A 8-Pin SOIC N T/R

Newark:
# VISHAY  SI4866BDY-T1-GE3  MOSFET Transistor, N Channel, 21.5 A, 12 V, 0.0042 ohm, 4.5 V, 400 mV