VISHAY SI1012X-T1-GE3 场效应管, MOSFET, N沟道, 20V, 500mA, SC-89
**Features:
* **Halogen-Free Option Available
* Low-Side Switching
* Low On-Resistance: 5 Ω
* Low Threshold: 0.9 V Typ.
* Fast Switching Speed: 35 ns Typ.
* TrenchFET® Power MOSFETs: 1.5 V Rated
* ESD Protected: 2000 V
**Applications:
**
* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
艾睿:
Trans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R
Allied Electronics:
MOSFET, Power; N-Ch; VDSS 20V; RDSON 0.41Ohm; ID 500mA; SC-89 SOT-490; Halogeenfree
富昌:
单 N沟道 20 V 0.7 Ohms 表面贴装 功率Mosfet - SC-89
Verical:
Trans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R
Newark:
# VISHAY SI1012X-T1-GE3 MOSFET Transistor, N Channel, 600 mA, 20 V, 700 mohm, 6 V, 900 mV
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
SI1012X-T1-GE3 Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
SI1012X-T1-E3 威世 | 类似代替 | SI1012X-T1-GE3和SI1012X-T1-E3的区别 |