SI7860DP-T1-E3

VISHAY  SI7860DP-T1-E3  晶体管, MOSFET, N沟道, 18 A, 30 V, 8 mohm, 10 V, 3 V

**Features:

* **Halogen-Free Option Available

* Low-Side Switching

* Low On-Resistance: 5 Ω

* Low Threshold: 0.9 V Typ.

* Fast Switching Speed: 35 ns Typ.

* TrenchFET® Power MOSFETs: 1.5 V Rated

* ESD Protected: 2000 V

**Applications:

**

* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

* Battery Operated Systems

* Power Supply Converter Circuits

* Load/Power Switching Cell Phones, Pagers

e络盟:
VISHAY  SI7860DP-T1-E3  晶体管, MOSFET, N沟道, 18 A, 30 V, 8 mohm, 10 V, 3 V

艾睿:
Trans MOSFET N-CH 30V 11A 8-Pin PowerPAK SO T/R

Allied Electronics:
N-CHANNEL 30V MOSFET, 8MOHM @ 10V