N 沟道 600 V 26 A 0.125 Ohm MDmesh II Plus Mosfet - D2PAK
N-Channel 600V 26A Tc 190W Tc Surface Mount D2PAK
得捷:
MOSFET N-CH 600V 26A D2PAK
贸泽:
MOSFET POWER MOSFET
艾睿:
Increase the current or voltage in your circuit with this STB33N60M2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 190000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh ii technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 600V 26A 3-Pin D2PAK T/R
富昌:
N-Channel 600 V 26 A 0.125 Ohm Surface Mount MDmesh II Plus Mosfet - D2PAK
Chip1Stop:
Trans MOSFET N-CH 650V 26A 3-Pin2+Tab D2PAK T/R
Verical:
Trans MOSFET N-CH 650V 26A 3-Pin2+Tab D2PAK T/R
通道数 1
漏源极电阻 125 mΩ
极性 N-CH
耗散功率 190 W
阈值电压 3 V
漏源极电压Vds 650 V
漏源击穿电压 600 V
连续漏极电流Ids 26A
上升时间 9.6 ns
输入电容Ciss 1781pF @100VVds
额定功率Max 190 W
下降时间 9 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 190W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free