STMICROELECTRONICS STP6N62K3 功率场效应管, MOSFET, N沟道, 5.5 A, 620 V, 0.95 ohm, 10 V, 3.75 V
N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics
得捷:
MOSFET N-CH 620V 5.5A TO220AB
立创商城:
N沟道 620V 5.5A
欧时:
STMicroelectronics MDmesh K3, SuperMESH3 系列 N沟道 MOSFET 晶体管 STP6N62K3, 5.5 A, Vds=620 V, 4引脚
e络盟:
STMICROELECTRONICS STP6N62K3 功率场效应管, MOSFET, N沟道, 5.5 A, 620 V, 0.95 ohm, 10 V, 3.75 V
艾睿:
This STP6N62K3 power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 90000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device is made with supermesh technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
富昌:
STP6N62K3 系列 N 沟道 620 V 1.2 Ohm SuperMESH3™ 功率 MOSFet - TO-220-3
Chip1Stop:
Trans MOSFET N-CH 620V 5.5A 3-Pin3+Tab TO-220 Tube
TME:
Transistor: N-MOSFET; unipolar; 620V; 3A; 30W; TO220-3
Verical:
Trans MOSFET N-CH 620V 5.5A 3-Pin3+Tab TO-220AB Tube
力源芯城:
620V,0.95Ω,5.5A,N沟道功率MOSFET
针脚数 3
漏源极电阻 0.95 Ω
极性 N-Channel
耗散功率 90 W
阈值电压 3.75 V
漏源极电压Vds 620 V
连续漏极电流Ids 5.5A
上升时间 12 ns
输入电容Ciss 875pF @50VVds
额定功率Max 90 W
下降时间 20 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 90W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 15.75 mm
封装 TO-220-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STP6N62K3 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STI6N62K3 意法半导体 | 完全替代 | STP6N62K3和STI6N62K3的区别 |
FQP8N60C 飞兆/仙童 | 功能相似 | STP6N62K3和FQP8N60C的区别 |
STU6N62K3 意法半导体 | 功能相似 | STP6N62K3和STU6N62K3的区别 |