STP23NM60ND

STMICROELECTRONICS  STP23NM60ND  功率场效应管, MOSFET, N沟道, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V

N 通道 FDmesh™ 功率 MOSFET，STMicroelectronics

得捷:
MOSFET N-CH 600V 19.5A TO220AB

欧时:
STMicroelectronics FDmesh 系列 Si N沟道 MOSFET STP23NM60ND, 19.5 A, Vds=600 V, 3引脚 TO-220封装

e络盟:
功率场效应管, MOSFET, N沟道, 600 V, 19.5 A, 0.15 ohm, TO-220, 通孔

艾睿:
Make an effective common gate amplifier using this STP23NM60ND power MOSFET from STMicroelectronics. Its maximum power dissipation is 150000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with fdmesh ii technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 600V 19.5A 3-Pin3+Tab TO-220 Tube

富昌:
N-Channel 600 V 0.18 Ω Flange Mount FDmesh™ II Power MosFet - TO-220

Chip1Stop:
Trans MOSFET N-CH 600V 19.5A 3-Pin3+Tab TO-220 Tube

Verical:
Trans MOSFET N-CH 600V 19.5A 3-Pin3+Tab TO-220 Tube

Newark:
# STMICROELECTRONICS  STP23NM60ND  MOSFET Transistor, N Channel, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V

力源芯城:
600V,19.5A,N沟道MOSFET

Win Source:
MOSFET N-CH 600V 19.5A TO-220