STP11NM50N

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STP11NM50N概述

500V,0.4Ω,8.5A,N沟道功率MOSFET

N-Channel 500V 8.5A Tc 70W Tc Through Hole TO-220AB


得捷:
MOSFET N-CH 500V 8.5A TO220AB


艾睿:
Compared to traditional transistors, STP11NM50N power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 70000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes mdmesh technology. This N channel MOSFET transistor operates in enhancement mode.


安富利:
Trans MOSFET N-CH 500V 8.5A 3-Pin3+Tab TO-220 Tube


Chip1Stop:
Trans MOSFET N-CH 500V 8.5A 3-Pin3+Tab TO-220 Tube


力源芯城:
500V,0.4Ω,8.5A,N沟道功率MOSFET


STP11NM50N中文资料参数规格
技术参数

漏源极电阻 0.4 Ω

极性 N-Channel

耗散功率 70 W

阈值电压 3 V

漏源极电压Vds 500 V

上升时间 10 ns

输入电容Ciss 547pF @50VVds

额定功率Max 70 W

下降时间 10 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 70W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

数据手册

在线购买STP11NM50N
型号: STP11NM50N
描述:500V,0.4Ω,8.5A,N沟道功率MOSFET
替代型号STP11NM50N
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STP11NM50N

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