500V,0.4Ω,8.5A,N沟道功率MOSFET
N-Channel 500V 8.5A Tc 70W Tc Through Hole TO-220AB
得捷:
MOSFET N-CH 500V 8.5A TO220AB
艾睿:
Compared to traditional transistors, STP11NM50N power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 70000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes mdmesh technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 500V 8.5A 3-Pin3+Tab TO-220 Tube
Chip1Stop:
Trans MOSFET N-CH 500V 8.5A 3-Pin3+Tab TO-220 Tube
力源芯城:
500V,0.4Ω,8.5A,N沟道功率MOSFET
漏源极电阻 0.4 Ω
极性 N-Channel
耗散功率 70 W
阈值电压 3 V
漏源极电压Vds 500 V
上升时间 10 ns
输入电容Ciss 547pF @50VVds
额定功率Max 70 W
下降时间 10 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 70W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STP11NM50N ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP13NM60N 意法半导体 | 类似代替 | STP11NM50N和STP13NM60N的区别 |
STP18N55M5 意法半导体 | 类似代替 | STP11NM50N和STP18N55M5的区别 |
STP19NM50N 意法半导体 | 类似代替 | STP11NM50N和STP19NM50N的区别 |