P 沟道 STripFET™ 功率 MOSFET，STMicroelectronicsSTripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。### MOSFET 晶体管，STMicroelectronics
P 沟道 STripFET™ 功率 MOSFET，STMicroelectronics
STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。
得捷:
MOSFET P-CH 60V 42A POWERFLAT
欧时:
STMicroelectronics STripFET 系列 Si P沟道 MOSFET STL42P6LLF6, 42 A, Vds=60 V, 8引脚 PowerFLAT封装
e络盟:
晶体管, MOSFET, P沟道, -42 A, -60 V, 0.023 ohm, -10 V, -2.5 V
艾睿:
Compared to traditional transistors, STL42P6LLF6 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 100000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes stripfet f6 technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
安富利:
Trans MOSFET P-CH 60V 42A 8-Pin PowerFlat T/R
Verical:
Trans MOSFET P-CH 60V 42A 8-Pin Power Flat EP T/R