N 通道 FDmesh™ 功率 MOSFET,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N 通道 FDmesh™ 功率 MOSFET,STMicroelectronics
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 600V 14A D2PAK
欧时:
STMicroelectronics FDmesh 系列 Si N沟道 MOSFET STB15NM60ND, 14 A, Vds=600 V, 3引脚 D2PAK TO-263封装
贸泽:
MOSFET N-channel 600V, 14A FDMesh II
艾睿:
This STB15NM60ND power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 125000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 600V 14A 3-Pin2+Tab D2PAK T/R
富昌:
N-Channel 600 V 299 mΩ Surface Mount FDmesh™ II Power MosFet - D2PAK
TME:
Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 9A; 125W; D2PAK
Verical:
Trans MOSFET N-CH 600V 14A 3-Pin2+Tab D2PAK T/R
力源芯城:
600V,14A,N沟道MOSFET
DeviceMart:
MOSFET N-CH 600V 14A D2PAK
Win Source:
N-channel 600 V - 0.27 Ω - 14 A - FDmesh II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247
通道数 1
漏源极电阻 0.27 Ω
极性 N-Channel
耗散功率 125 W
阈值电压 4 V
漏源极电压Vds 600 V
漏源击穿电压 600 V
连续漏极电流Ids 14A
上升时间 20 ns
输入电容Ciss 1250pF @50VVds
额定功率Max 125 W
下降时间 28 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 125W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.75 mm
宽度 10.4 mm
高度 4.6 mm
封装 TO-263-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STB15NM60ND ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STB15NM60N 意法半导体 | 类似代替 | STB15NM60ND和STB15NM60N的区别 |
IPA60R165CP 英飞凌 | 功能相似 | STB15NM60ND和IPA60R165CP的区别 |
SIHB15N60E-GE3 威世 | 功能相似 | STB15NM60ND和SIHB15N60E-GE3的区别 |