N沟道30 V ， 0.0037 I© ， 80 A， DPAK STripFETâ ?? ¢六DeepGATEâ ?? ¢功率MOSFET N-channel 30 V, 0.0037 Ω, 80 A, DPAK STripFET⢠VI DeepGATE⢠Power MOSFET
Make an effective common gate amplifier using this power MOSFET from STMicroelectronics. Its maximum power dissipation is 70000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
通道数 1
极性 N-CH
耗散功率 70 W
阈值电压 2.5 V
漏源极电压Vds 30 V
连续漏极电流Ids 80A
上升时间 91 ns
输入电容Ciss 2200pF @25VVds
额定功率Max 70 W
下降时间 23.4 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 70W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STD96N3LLH6 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STD15NF10T4 意法半导体 | 类似代替 | STD96N3LLH6和STD15NF10T4的区别 |
STD86N3LH5 意法半导体 | 类似代替 | STD96N3LLH6和STD86N3LH5的区别 |
STD95N3LLH6 意法半导体 | 类似代替 | STD96N3LLH6和STD95N3LLH6的区别 |