N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics
得捷:
MOSFET N-CH 525V 6A DPAK
欧时:
STMicroelectronics MDmesh K3, SuperMESH3 系列 N沟道 MOSFET 晶体管 STD7N52K3, 6 A, Vds=525 V, 3引脚 TO-252封装
艾睿:
This STD7N52K3 power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 90000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes supermesh 3 technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans MOSFET N-CH 525V 6A 3-Pin2+Tab DPAK T/R
富昌:
N-Channel 525 V 0.85 Ohm Surface Mount SuperMesh III Power MosFet - TO-252-3
TME:
Transistor: N-MOSFET; unipolar; 525V; 3.8A; 90W; DPAK
Verical:
Trans MOSFET N-CH 525V 6A 3-Pin2+Tab DPAK T/R
力源芯城:
525V,6A,N沟道MOSFET
Win Source:
MOSFET N-CH 525V 6.2A DPAK
漏源极电阻 0.72 Ω
极性 N-Channel
耗散功率 90 W
阈值电压 3.75 V
漏源极电压Vds 525 V
连续漏极电流Ids 6A
上升时间 11 ns
输入电容Ciss 737pF @100VVds
额定功率Max 90 W
下降时间 19 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 90W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.2 mm
高度 2.4 mm
封装 TO-252-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STD7N52K3 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
FDD6N50TM_WS 飞兆/仙童 | 功能相似 | STD7N52K3和FDD6N50TM_WS的区别 |
STB7N52K3 意法半导体 | 功能相似 | STD7N52K3和STB7N52K3的区别 |
NTE2935 NTE Electronics | 功能相似 | STD7N52K3和NTE2935的区别 |