





N沟道600V 0.140-20A TO- 220 / FP / DAK / TO- 247第二代的MDmesh MOSFET N-CHANNEL 600V 0.140-20A TO-220/FP/DAK/TO-247 SECOND GENERATION MDmesh MOSFET
N-Channel 600V 21A Tc 160W Tc Through Hole TO-247-3
得捷:
MOSFET N-CH 600V 21A TO-247
艾睿:
Increase the current or voltage in your circuit with this STW25NM60N power MOSFET from STMicroelectronics. Its maximum power dissipation is 160000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes mdmesh technology. This N channel MOSFET transistor operates in enhancement mode.
Win Source:
MOSFET N-CH 600V 21A TO-247
额定电压DC 600 V
额定电流 20.0 A
漏源极电阻 140 mΩ
极性 N-Channel
耗散功率 160W Tc
输入电容 2.54 nF
栅电荷 84.0 nC
漏源极电压Vds 600 V
漏源击穿电压 600 V
栅源击穿电压 ±25.0 V
连续漏极电流Ids 20.0 A
上升时间 18 ns
输入电容Ciss 2400pF @50VVds
额定功率Max 160 W
下降时间 24 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 160W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
封装 TO-247-3
工作温度 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STW25NM60N ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STW26NM60N 意法半导体 | 类似代替 | STW25NM60N和STW26NM60N的区别 |
STW45NM50 意法半导体 | 类似代替 | STW25NM60N和STW45NM50的区别 |
STW18NM80 意法半导体 | 类似代替 | STW25NM60N和STW18NM80的区别 |