STMICROELECTRONICS STB5NK50ZT4 晶体管, MOSFET, N沟道, 4.4 A, 500 V, 1.22 ohm, 10 V, 3.75 V
The is a SuperMESH™ N-channel Zener-protected MOSFET obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. The series complements full range of high voltage MOSFETs including revolutionary MDmesh™ products.
- .
- 1.22R RDS ON
- .
- Extremely high dV/dt capability
- .
- Improved ESD capability
- .
- 100% Avalanche rated
- .
- Gate charge minimized
- .
- Very low intrinsic capacitances
- .
- Very good manufacturing repeatability
额定电压DC 500 V
额定电流 4.40 A
针脚数 3
漏源极电阻 1.22 Ω
极性 N-Channel
耗散功率 70 W
阈值电压 3.75 V
漏源极电压Vds 500 V
漏源击穿电压 500 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 4.40 A
上升时间 10 ns
输入电容Ciss 535pF @25VVds
额定功率Max 70 W
下降时间 15 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 70W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.4 mm
宽度 9.35 mm
高度 4.6 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 照明, Power Management, 工业, Lighting, 电源管理, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17