TH58NVG1S3AFT05

SLC NAND Flash Parallel 3.3V 2G-bit 256M x 8 35ns 48Pin TSOP-I

2GBIT 256M u 8BITS CMOS NAND E2PROM

DESCRIPTION

The TH58NVG1S3A is a single 3.3-V 2G-bit 2,214,592,512 bits NAND Electrically Erasable and Programmable Read-Only Memory NAND E2PROM organized as 2048+64 bytes x 64 pages x 2048 blocks. The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit 128 Kbytes + 4Kbytes: 2112 bytes x 64 pages.

The TH58NVG1S3A is a serial-type memory device which utilizes the I/O pins for both address and data input / output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density nonvolatile memory data storage.

FEATURES

• Organization

   Memory cell allay 2112 u 64K u 8 u 2

   Register 2112 u 8

   Page size 2112bytes

   Block size 128K 4K bytes

• Modes

   Read, Reset, Auto Page Program

   Auto Block Erase, Status Read

• Mode control

   Serial input㧛output

   Command control

• Powersupply VCC 2.7 V to 3.6 V

• Program/Erase Cycles 1E5 CyclesWith ECC

• Access time

   Cell array to register 25 μs max

   Serial Read Cycle 50 ns min

• Operating current

   Read 50 ns cycle 10 mA typ.

   Program avg. 10 mA typ.

   Erase avg. 10 mA typ.

   Standby 50 μA max

• Package

  TSOP I 48-P-1220-0.50Weight : 0.53 g typ.