VND7N0413TR

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VND7N0413TR概述

VND7N04系列 N沟道 42 V 0.14 Ohm 自保护 功率MOSFET-TO-252-3

It"s easy to keep your circuit safe from high voltages with this simple low side power switch by STMicroelectronics. This charge controller has single output. It features 0.28Max Ohm switch on resistance. This charge controller has an input voltage of 18Max V. This device has a maximum power dissipation of 60000 mW. This device has a supply current of 0.25 mA and a minimum output current of 4 A. Its maximum power dissipation is 60000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components.

VND7N0413TR中文资料参数规格
技术参数

额定电压DC 42.0 V

额定电流 7.00 A

输出接口数 1

供电电流 0.25 mA

漏源极电阻 140 mΩ

极性 N-Channel

耗散功率 60 W

漏源击穿电压 42 V

连续漏极电流Ids 7.00 A

输入电压Max 18 V

输出电流Max 4 A

输出电流Min 4 A

输入数 1

耗散功率Max 60000 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-252-3

外形尺寸

封装 TO-252-3

物理参数

工作温度 -40℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买VND7N0413TR
型号: VND7N0413TR
描述:VND7N04系列 N沟道 42 V 0.14 Ohm 自保护 功率MOSFET-TO-252-3
替代型号VND7N0413TR
型号/品牌 代替类型 替代型号对比

VND7N0413TR

ST Microelectronics 意法半导体

当前型号

当前型号

VND7N04-E

意法半导体

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VND7N0413TR和VND7N04-E的区别

VND7N04TR-E

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VND7N0413TR和VND7N04TR-E的区别

VND7N04

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VND7N0413TR和VND7N04的区别

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