VND7N04系列 N沟道 42 V 0.14 Ohm 自保护 功率MOSFET-TO-252-3
It"s easy to keep your circuit safe from high voltages with this simple low side power switch by STMicroelectronics. This charge controller has single output. It features 0.28Max Ohm switch on resistance. This charge controller has an input voltage of 18Max V. This device has a maximum power dissipation of 60000 mW. This device has a supply current of 0.25 mA and a minimum output current of 4 A. Its maximum power dissipation is 60000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components.
额定电压DC 42.0 V
额定电流 7.00 A
输出接口数 1
供电电流 0.25 mA
漏源极电阻 140 mΩ
极性 N-Channel
耗散功率 60 W
漏源击穿电压 42 V
连续漏极电流Ids 7.00 A
输入电压Max 18 V
输出电流Max 4 A
输出电流Min 4 A
输入数 1
耗散功率Max 60000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -40℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
VND7N0413TR ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
VND7N04-E 意法半导体 | 类似代替 | VND7N0413TR和VND7N04-E的区别 |
VND7N04TR-E 意法半导体 | 类似代替 | VND7N0413TR和VND7N04TR-E的区别 |
VND7N04 意法半导体 | 类似代替 | VND7N0413TR和VND7N04的区别 |