X28C010DMB-12

X28C010DMB-12概述

5V ,字节EEPROM可变 5V, Byte Alterable EEPROM

The X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersil"s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the X28C010/X28HT010 is a 5V only device. The X28C010/X28HT010 features the JEDEC approved pin out for byte-wide memories, compatible with industry standard EEPROMs.

Features

• Access time: 120ns

• Simple byte and page write

   - Single 5V supply

   - No external high voltages or VPP control circuits

   - Self-timed

      • No erase before write

      • No complex programming algorithms

      • No overerase problem

• Low power CMOS

   - Active: 50mA

   - Standby: 500µA

• Software data protection

   - Protects data against system level inadvertent writes

• High speed page write capability

• Highly reliable Direct Write™ cell

   - Endurance: 100,000 write cycles

   - Data retention: 100 years

• Early end of write detection

   - DATA polling

   - Toggle bit polling

• X28HT010 is fuly functional @ +175°C

X28C010DMB-12中文资料参数规格
封装参数

封装 DIP

外形尺寸

封装 DIP

其他

产品生命周期 Unknown

符合标准

RoHS标准 RoHS Compliant

数据手册

在线购买X28C010DMB-12
型号: X28C010DMB-12
制造商: Intersil 英特矽尔
描述:5V ,字节EEPROM可变 5V, Byte Alterable EEPROM
替代型号X28C010DMB-12
型号/品牌 代替类型 替代型号对比

X28C010DMB-12

Intersil 英特矽尔

当前型号

当前型号

AT28C010E-12DM/883

微芯

功能相似

X28C010DMB-12和AT28C010E-12DM/883的区别

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