MOSFET P-CH 20V 6.4A 8SOIC
SUMMARY
VBRDSS=-20V; RDSON=0.025 D=-8.0A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
额定电压DC -20.0 V
额定电流 -8.00 A
漏源极电阻 45.0 mΩ
极性 P-Channel
耗散功率 1.56W Ta
输入电容 2.07 nF
漏源极电压Vds 20 V
栅源击穿电压 ±12.0 V
连续漏极电流Ids 8.00 A
上升时间 44.3 ns
输入电容Ciss 2068pF @15VVds
下降时间 98.4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1.56W Ta
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 无铅
REACH SVHC标准 No SVHC
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
ZXM66P02N8TC Diodes 美台 | 当前型号 | 当前型号 |
ZXM66P02N8TA 美台 | 类似代替 | ZXM66P02N8TC和ZXM66P02N8TA的区别 |
SI6463BDQ-T1-E3 Vishay Siliconix | 功能相似 | ZXM66P02N8TC和SI6463BDQ-T1-E3的区别 |
SI6463BDQ-T1-GE3 Vishay Siliconix | 功能相似 | ZXM66P02N8TC和SI6463BDQ-T1-GE3的区别 |