ZVN4206G 系列 60 V 1 Ohm N 沟道 增强模式 垂直 DMOS FET SOT-223
Use Zetex"s power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with dmos technology.
额定电压DC 60.0 V
额定电流 1.00 A
漏源极电阻 1 Ω
极性 N-Channel
耗散功率 2 W
阈值电压 1.3 V
输入电容 20.0 pF
漏源极电压Vds 60 V
漏源击穿电压 60.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 1.00 A
上升时间 12 ns
输入电容Ciss 100pF @25VVds
额定功率Max 2 W
下降时间 15 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
封装 TO-261-4
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
ZVN4206GVTA Diodes 美台 | 当前型号 | 当前型号 |
BSP206 恩智浦 | 功能相似 | ZVN4206GVTA和BSP206的区别 |
BSP205 恩智浦 | 功能相似 | ZVN4206GVTA和BSP205的区别 |