SI2323DS-T1-E3

VISHAY  SI2323DS-T1-E3  晶体管, MOSFET, P沟道, -4.7 A, -20 V, 39 mohm, -4.5 V, -1 V

The is a P-channel TrenchFET® Power MOSFET with power dissipation at 1.25W.

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±8V Gate-source voltage

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Halogen-free

欧时:
### P 通道 MOSFET，8V 至 20V，Vishay Semiconductor### MOSFET 晶体管，Vishay Semiconductor

e络盟:
VISHAY  SI2323DS-T1-E3  场效应管, MOSFET, P沟道, -20V, 4.7A TO-236, 整卷

艾睿:
Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R

富昌:
单 P 沟道 20 V 0.039 Ohms 表面贴装 功率 Mosfet - TO-236

TME:
Transistor: P-MOSFET; unipolar; -20V; -4.7A; SOT23

Verical:
Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R

Newark:
# VISHAY  SI2323DS-T1-E3  MOSFET Transistor, P Channel, -4.7 A, -20 V, 39 mohm, -4.5 V, -1 V

力源芯城:
-20V,-4.7A,G163P沟道功率MOSFET