STU8N65M5

N 通道 MDmesh™ M5 系列，STMicroelectronicsMDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。### MOSFET 晶体管，STMicroelectronics

N 通道 MDmesh™ M5 系列，STMicroelectronics

MDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。

得捷:
MOSFET N-CH 650V 7A IPAK

欧时:
STMicroelectronics MDmesh M5 系列 Si N沟道 MOSFET 晶体管 STU8N65M5, 7 A, Vds=650 V, 3引脚 TO-251封装

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STU8N65M5 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 70000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes mdmesh v technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 650V 7A 3-Pin3+Tab IPAK Tube

Chip1Stop:
Trans MOSFET N-CH 650V 7A 3-Pin3+Tab IPAK Tube

力源芯城:
650V,0.56Ω,7A,N沟道功率MOSFET

Win Source:
MOSFET N-CH 650V 7A IPAK

DeviceMart:
MOSFET N-CH 650V 7A IPAK