STMICROELECTRONICS STB100NF03L-03T4 晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0026 ohm, 10 V, 1.7 V
N-Channel 30V 100A Tc 300W Tc Surface Mount D2PAK
得捷:
MOSFET N-CH 30V 100A D2PAK
立创商城:
N沟道 30V 100A
艾睿:
Compared to traditional transistors, STB100NF03L-03T4 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 300000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with stripfet iii technology.
安富利:
Trans MOSFET N-CH 30V 100A 3-Pin2+Tab D2PAK T/R
Chip1Stop:
Trans MOSFET N-CH 30V 100A Automotive 3-Pin2+Tab D2PAK T/R
Win Source:
MOSFET N-CH 30V 100A D2PAK
额定电压DC 30.0 V
额定电流 100 A
通道数 1
针脚数 3
漏源极电阻 0.0026 Ω
极性 N-Channel
耗散功率 300 W
阈值电压 1.7 V
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±16.0 V
连续漏极电流Ids 100 A
上升时间 315 ns
输入电容Ciss 6200pF @25VVds
额定功率Max 300 W
下降时间 95 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 300W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
宽度 9.35 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STB100NF03L-03T4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STB100NF03L-03 意法半导体 | 功能相似 | STB100NF03L-03T4和STB100NF03L-03的区别 |