2N7000_D26Z

FAIRCHILD SEMICONDUCTOR  2N7000_D26Z  晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 2.1 V

The is a 60V N-channel enhancement mode Field Effect Transistor produced using "s proprietary high cell density, DMOS technology. It has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications. This product is general usage and suitable for many different applications.

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High density cell design for extremely low RDS ON

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Voltage controlled small signal switch

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Rugged and reliable

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High saturation current capability

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60V Drain gate voltage VDGR

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±20V Continuous gate source voltage VGSS

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312.5°C/W Thermal resistance, junction to ambient