800V N沟道MOSFET 800V N-Channel MOSFET
Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.
This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devicesare well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
Features
• 8.4A, 800V, RDSon= 1.55Ω@VGS= 10 V
• Low gate charge typical 35 nC
• Low Crss typical 13pF
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
极性 N-CH
耗散功率 220 W
漏源极电压Vds 800 V
连续漏极电流Ids 8.4A
上升时间 110 ns
输入电容Ciss 2050pF @25VVds
下降时间 70 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 220W Tc
安装方式 Through Hole
封装 TO-3-3
长度 16.2 mm
宽度 5 mm
高度 20.1 mm
封装 TO-3-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99