IXFN26N90

IXYS SEMICONDUCTOR  IXFN26N90  功率场效应管, MOSFET, N沟道, 26 A, 900 V, 300 mohm, 10 V, 5 V

Increase the current or voltage in your circuit with this power MOSFET from Ixys Corporation. Its maximum power dissipation is 600000 mW. This N channel MOSFET transistor operates in enhancement mode. This device utilizes hiperfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

得捷:
MOSFET N-CH 900V 26A SOT-227B

e络盟:
IXYS SEMICONDUCTOR  IXFN26N90  功率场效应管, MOSFET, N沟道, 26 A, 900 V, 300 mohm, 10 V, 5 V

艾睿:
Trans MOSFET N-CH 900V 26A 4-Pin SOT-227B

富昌:
Single N-Channel 900 V 600 W 240 nC Chassis Mount Power Mosfet - SOT227

Verical:
Trans MOSFET N-CH 900V 26A 4-Pin SOT-227B