MICROCHIP SST39SF040-70-4I-WHE 闪存, 或非, 4 Mbit, 512K x 8位, TSOP, 32 引脚
The is a 4MB CMOS multi-purpose Flash Memory manufactured with SSTs proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The device writes with a 4.5 to 5.5V power supply. Featuring high performance byte-program, the device provides a maximum byte-program time of 20µsec. This device uses toggle bit or data# polling to indicate the completion of program operation. To protect against inadvertent write, it has on-chip hardware and software data protection schemes. Designed, manufactured and tested for a wide spectrum of applications, this device is offered with a guaranteed typical endurance of 100000 cycles. Data retention is rated at greater than 100 years.
电源电压DC 4.50V min
工作电压 4.5V ~ 5.5V
供电电流 25 mA
针脚数 32
位数 8
存取时间 70 ns
内存容量 500000 B
存取时间Max 70 ns
工作温度Max 85 ℃
工作温度Min -40 ℃
电源电压 4.5V ~ 5.5V
电源电压Max 5.5 V
电源电压Min 4.5 V
安装方式 Surface Mount
引脚数 32
封装 TSOP-32
封装 TSOP-32
工作温度 -40℃ ~ 85℃
产品生命周期 Active
包装方式 Tray
制造应用 计算机和计算机周边, 通信与网络, Computers & Computer Peripherals, Consumer Electronics, 消费电子产品, 工业, Industrial, Communications & Networking
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 3A991.b.1.a
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
SST39SF040-70-4I-WHE Microchip 微芯 | 当前型号 | 当前型号 |
SST39SF040-70-4C-WHE 微芯 | 类似代替 | SST39SF040-70-4I-WHE和SST39SF040-70-4C-WHE的区别 |
SST39SF040-70-4C-WH Silicon Storage Tech | 功能相似 | SST39SF040-70-4I-WHE和SST39SF040-70-4C-WH的区别 |
SST39SF040-70-4I-WH Silicon Storage Tech | 功能相似 | SST39SF040-70-4I-WHE和SST39SF040-70-4I-WH的区别 |