BSS123L

晶体管, MOSFET, N沟道, 170 mA, 100 V, 2.98 ohm, 10 V, 1.405 V

The is produced using high cell density trench MOSFET technology. This minimizes on-state resistance while providing rugged, reliable and fast switching performance. The BSS123L is particularly suited for low voltage, low current applications such as small servo motor controller, power MOSFET gate drivers, logic level transistorss, high speed line drivers, power management/power supply and switching applications.

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High density cell design for low on-resistance

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Rugged and reliable

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Very low capacitance

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Fast switching speed