AFT18H357-24NR6

AFT18H357-24NR6图片1
AFT18H357-24NR6概述

RF Power Transistor,1805 to 1880MHz, 200W, Typ Gain in dB is 17.5 @ 1805MHz, 28V, LDMOS, SOT1819

Overview

The 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.

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## Features

* Advanced high performance in-package Doherty

* High thermal conductivity packaging technology for reduced thermal resistance

* Greater negative gate-source voltage range for improved Class C operation

* Designed for digital predistortion error correction systems

* RoHS compliant

## Features RF Performance Table

### 1800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.9 V, Pout = 63 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
.
*Frequency** | **Gps
dB
.
* | **ηD
%
.
* | **Output PAR
dB
.
* | **ACPR
dBc
.
*

\---|---|---|---|---

1805 MHz| 17.5| 48.7| 7.6| –37.5

1840 MHz| 17.6| 48.3| 7.7| –38.9

1880 MHz| 17.4| 48.2| 7.7| –38.5

AFT18H357-24NR6中文资料参数规格
技术参数

频率 1.81 GHz

输出功率 63 W

增益 17.5 dB

测试电流 800 mA

额定电压 65 V

电源电压 28 V

封装参数

引脚数 6

封装 OM-1230-4L2L

外形尺寸

封装 OM-1230-4L2L

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买AFT18H357-24NR6
型号: AFT18H357-24NR6
制造商: NXP 恩智浦
描述:RF Power Transistor,1805 to 1880MHz, 200W, Typ Gain in dB is 17.5 @ 1805MHz, 28V, LDMOS, SOT1819

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