BS62LV4006EIP55

BSI BRILLIANCE SEMICONDUCTOR  BS62LV4006EIP55  芯片, SRAM, 4M, 512KX8, 2.4-5.5V, SMD

DESCRIPTION

The BS62LV4006 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 by 8 bits and operates form a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 0.25uA at 3.0V/25°C and maximum access time of 55ns at 3.0V/85°C.

FEATURES

• Wide VCC operation voltage : 2.4V ~ 5.5V

• Very low power consumption:

      VCC = 3.0V  Operationcurrent :  30mA Max.  at 55ns

                                                 2mA Max.  at 1MHz

      Standby current :  0.25uA Typ.  at 25OC

      VCC = 5.0V  Operationcurrent :  70mA Max.  at 55ns

                                                 10mA Max.  at 1MHz

       Standby current :  1.5uA Typ.  at 25OC

• Highspeed access time:

-55  55ns Max. at VCC=3.0~5.5V

-70  70ns Max. at VCC=2.7~5.5V

• Automatic power down whenchip is deselected