VISHAY IRF9630PBF 晶体管, MOSFET, P沟道, -6.5 A, -200 V, 800 mohm, -10 V, 4 V
The is a -200V single P-channel HEXFET® Power MOSFET, third generation HEXFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
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- Dynamic dV/dt rating
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- Repetitive avalanche rated
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- Easy to parallel
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- Simple drive requirements
额定电压DC -200 V
额定电流 -6.50 A
额定功率 74 W
针脚数 3
漏源极电阻 0.8 Ω
极性 P-Channel
耗散功率 74 W
阈值电压 4 V
漏源极电压Vds 200 V
漏源击穿电压 -200 V
连续漏极电流Ids -6.50 A
上升时间 27.0 ns
输入电容Ciss 700pF @25VVds
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 74 W
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.51 mm
宽度 4.7 mm
高度 15.49 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 电源管理, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free