IRFIZ48GPBF

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IRFIZ48GPBF概述

N 通道 MOSFET,60V 至 90V,Vishay Semiconductor### MOSFET 晶体管,Vishay Semiconductor

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a  heatsinkusing a single clip or by a single screw fixing.

FEATURES

• Isolated Package

• High Voltage Isolation = 2.5 kVRMSt = 60 s; f = 60 Hz

• Sink to Lead Creepage Distance = 4.8 mm

• 175 °C Operating Temperature

• Dynamic dV/dt Rating

• Low Thermal Resistance

• Lead Pb-free Available

IRFIZ48GPBF中文资料参数规格
技术参数

针脚数 3

漏源极电阻 0.018 Ω

极性 N-Channel

耗散功率 50 W

阈值电压 4 V

漏源极电压Vds 60 V

连续漏极电流Ids 37.0 A

上升时间 250 ns

输入电容Ciss 2400pF @25VVds

下降时间 250 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 50 W

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

长度 10.41 mm

宽度 4.7 mm

高度 9.8 mm

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 175℃

其他

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

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型号: IRFIZ48GPBF
描述:N 通道 MOSFET,60V 至 90V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor

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