IS61WV51216BLL-10TLI

INTEGRATED SILICON SOLUTION ISSI  IS61WV51216BLL-10TLI  芯片, 存储器, SRAM, 8MB, 10NS, 44TSOPII

The is a 8Mb high-speed static RAM organized as 512K words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH deselected, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable WE controls both writing and reading of the memory. A data byte allows Upper Byte UB and Lower Byte LB access.

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High-performance, low-power CMOS process

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Multiple centre power and ground pins for greater noise immunity

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Easy memory expansion with CE and OE options

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CE power-down

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Fully static operation, no clock or refresh required

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TTL compatible inputs and outputs

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Data control for upper and lower bytes