INFINEON IPD090N03L G 晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0075 ohm, 10 V, 2.2 V
The is a 30V N-channel Power MOSFET for switched mode power supplies SMPS. OptiMOS™ 30V MOSFET sets new standards in power density and energy efficiency. This is tailored to the needs of power management in notebook by improved EMI behaviour as well as increased battery life.
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- Fast switching MOSFET
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- Increased battery lifetime
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- Improved EMI behaviour making external snubber networks obsolete
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- Saving space
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- Reducing power losses
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- Superior thermal resistance
通道数 1
针脚数 3
漏源极电阻 0.0075 Ω
极性 N-Channel
耗散功率 42 W
阈值电压 2.2 V
漏源极电压Vds 30 V
漏源击穿电压 30 V
上升时间 3 ns
输入电容Ciss 1600pF @15VVds
额定功率Max 42 W
下降时间 2.6 ns
工作温度Max 175 ℃
工作温度Min 55 ℃
耗散功率Max 42000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.5 mm
宽度 6.22 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Onboard charger, 电机驱动与控制, 计算机和计算机周边, 发光二极管照明, LED Lighting, Mainboard, Power Management, Motor Drive & Control, VRD/VRM, Computers & Computer Peripherals, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IPD090N03L G Infineon 英飞凌 | 当前型号 | 当前型号 |
IPD090N03LGATMA1 英飞凌 | 类似代替 | IPD090N03L G和IPD090N03LGATMA1的区别 |
IRLR8721PBF 英飞凌 | 类似代替 | IPD090N03L G和IRLR8721PBF的区别 |