IXTM24N50

IXYS SEMICONDUCTOR  IXTM24N50  晶体管, MOSFET, N沟道, 24 A, 500 V, 230 mohm, 10 V, 4 V

N-Channel Enhancement Mode

Features

International standard packages

Low RDS onHDMOS™ process

Rugged polysilicon gate cell structure

Low package inductance < 5 nH

\- easy to drive and to protect

Fast switching times

Applications

Switch-mode and resonant-mode power supplies

Motor controls

Uninterruptible Power Supplies UPS

DC choppers

e络盟:
功率场效应管, MOSFET, N沟道, 500 V, 24 A, 0.23 ohm, TO-204AA, 通孔

艾睿:
Trans MOSFET N-CH 500V 24A 3-Pin2+Tab TO-204AE

Verical:
Trans MOSFET N-CH 500V 24A 3-Pin2+Tab TO-204AE