IRGS4715DTRRPBF

Trans IGBT Chip N-CH 650V 21A 100000mW 3Pin2+Tab D2PAK T/R

Benefits:

.

Low VCEON and Switching Losses

.

5.5µs Short Circuit SOA

.

Square RBSOA

.

Maximum Junction Temperature 175°C

.

Positive VCEON Temperature Coefficient

.

Lead-Free, RoHs compliant

得捷:
IGBT 650V D2-PAK

艾睿:
Trans IGBT Chip N-CH 650V 21A 100000mW 3-Pin2+Tab D2PAK T/R

安富利:
Trans IGBT Chip N-CH 650V 21A 3-Pin D2PAK T/R