IPB80N04S2-H4概述
OptiMOS㈢功率三极管 OptiMOS㈢ Power-Transistor
Summary of Features:
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- N-channel - Enhancement mode
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- Automotive AEC Q101 qualified
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- MSL1 up to 260°C peak reflow
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- 175°C operating temperature
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- Ultra low Rdson
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- 100% Avalanche tested
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- Green product RoHS compliant
Benefits:
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- world"s lowest RDS at 40V on
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- highest current capability
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- lowest switching and conduction power losses for highest thermal efficiency
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- robust packages with superior quality and reliability
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- Optimized total gate charge enables smaller driver output stages
IPB80N04S2-H4中文资料参数规格
技术参数
极性 N-CH
漏源极电压Vds 40 V
连续漏极电流Ids 80A
上升时间 63 ns
输入电容Ciss 4400pF @25VVds
额定功率Max 300 W
下降时间 22 ns
封装参数
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
外形尺寸
封装 TO-252-3
物理参数
工作温度 -55℃ ~ 175℃
其他
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, elec, Thus OptiMOS-T2 40V products based on Infineon’s advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
符合标准
RoHS标准 RoHS Compliant
含铅标准 Lead Free
海关信息
ECCN代码 EAR99
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