IPA80R1K0CE概述
800V,5.7A,N沟道功率MOSFET
Summary of Features:
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Low specific on-state resistance R DSon*A
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Very low energy storage in output capacitance E oss @ 400V
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Low gate charge Q g
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Field-proven CoolMOS™ quality
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CoolMOS™ technology has been manufactured by
since 1998
Benefits:
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High efficiency and power density
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Outstanding price/performance
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High reliability
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Ease-of-use
Target Applications:
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LED lighting
IPA80R1K0CE中文资料参数规格 技术参数
极性 N-CH
漏源极电压Vds 800 V
连续漏极电流Ids 5.7A
封装参数
安装方式 Through Hole
封装 TO-220
符合标准
RoHS标准 RoHS Compliant
含铅标准 Lead Free
在线购买IPA80R1K0CE 型号: IPA80R1K0CE
描述:800V,5.7A,N沟道功率MOSFET